schottky rectifier 30 amp, 30v 30SLJQ030 major ratings and characteristics description/features 10/03/00 case style ir case style smd-0.5 www.irf.com 1 characteristics 30SLJQ030 units i f(av) 30 a v rrm 30 v i fsm @ tp = 8.3ms half-sine 150 a v f @ 30apk, t j =125c 0.57 v t j , t stg operating and storage -55 to 150 c cathode anode anode high efficiency series the 30SLJQ030 schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. it is packaged in the hermetic surface mount smd-0.5 ceramic package. the device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. full mil-prf-19500 quality conformance testing is available on source control drawings to tx, txv and s quality levels. ? hermetically sealed ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? surface mount ? lightweight pd - 93966
30SLJQ030 2 www.irf.com part number 30SLJQ030 v r max. dc reverse voltage (v) v rwm max. working peak reverse voltage (v) voltage ratings 30 parameters limits units conditions i f(av) max. average forward current 30 a 50% duty cycle @ t c = 105c, square waveform see fig. 5 i fsm max. peak one cycle non - repetitive 150 a @ t p = 8.3 ms half-sine surge current absolute maximum ratings parameters limits units conditions v fm max. forward voltage drop 0.58 v @ 15a see fig. 1 ? 0.61 v @ 20a t j = -55c ? 0.67 v @ 30a 0.51 v @ 15a 0.55 v @ 20a t j = 25c ? 0.62 v @ 30a 0.41 v @ 15a 0.47 v @ 20a t j = 125c ? 0.57 v @ 30a i rm max. reverse leakage current 1.0 ma t j = 25c see fig. 2 ? 75 ma t j = 100c v r = rated v r ? 150 ma t j = 125c c t max. junction capacitance 2000 pf v r = 5v dc ( 1mhz, 25c ) ? l s typical series inductance 4.8 nh measured from center of cathode pad to center of anode pad electrical specifications parameters limits units conditions t j max.junction temperature range -55 to 150 c t stg max. storage temperature range -55 to 150 c r thjc max. thermal resistance, junction 1.6 c/w dc operation see fig. 4 to case wt weight (typical) 1.0 g die size (typical) 115x170 mils case style smd-0.5 thermal-mechanical specifications ? pulse width < 300s, duty cycle < 2% ? pins 2 and 3 externally tied together
30SLJQ030 www.irf.com 3 fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - max. forward voltage drop characteristics 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 1 10 100 instantaneous forward current - i f (a) tj = -55c tj = 125c tj = 25c 0 10 20 30 reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 reverse current - i r ( ma ) 125c 75c 25c 100c 0 10 20 30 reverse voltage -v r (v) 100 1000 10000 junction capacitance - c t (pf) t j = 25c
30SLJQ030 4 www.irf.com fig. 5 - max. allowable case temperature vs. average forward current ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 10/00 fig. 4 - max. thermal impedance z thjc characteristics 0 10 20 30 40 50 60 average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 180 allowable case temprature - (c) 30SLJQ030 r thjc = 1.6c/w dc 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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